Fundamentals of Modern VLSI Devices [Yuan Taur, Tak H. Ning] on . *FREE* shipping on qualifying offers. This book examines in detail the basic. Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. James Kao, Siva Narendra, Anantha Chandrakasan, Subthreshold leakage modeling and reduction techniques, Proceedings of the IEEE/ACM.
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Fundamentals of Modern VLSI Devices
Patrick rated it it was amazing May 29, Changrong marked it as to-read Nov 05, Pejman Khosropour rated it liked it Feb 06, My library Help Moedrn Book Search. Good textbook for grad students learning device fundamentals.
This makes the book invaluably useful in practical transitor design as well as in the classroom. For those who know device physics, rather well, this book provides great material, drawn primarily from the authors’ experience at IBM’s T J watson research lab. For example the quantum confinement of the inversion layer is so briefly described that someone reading the topic for the first time will never be able to make sense out of it.
Carol Andserson rated it it was amazing Feb 19, The cevices renowned authors highlight the interdependencies and trade-offs between practically important device parameters and discuss device scaling and scaling limits of CMOS and bipolar devices. Amazon Giveaway allows you to run promotional giveaways in order to create buzz, reward your audience, and attract new followers and customers.
You need to have some basic knowledge of device physics before reading the book.
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Fundamentals of Modern VLSI Devices – Yuan Taur, Tak H. Ning – Google Books
They also discuss in detail the scaling, and physical limits to the scaling, of CMOS and bipolar devices. The optimization of these devices for VLSI applications is also covered.
The authors begin with a thorough review of the relevant aspects of semiconductor physics, and proceed to a description of the design of CMOS and bipolar fujdamentals.