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2N3020 DATASHEET PDF

2N DC Current Gain. *hFE. IC=mA, VCE=10V. 30 – IC=10mA, VCE= . It is recommended that you completely review our Data Sheet(s) so as to. 2N datasheet, 2N circuit, 2N data sheet: MICRO-ELECTRONICS – NPN SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES,alldatasheet. 2N Transistor Datasheet pdf, 2N Equivalent. Parameters and Characteristics.

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Note – I have not bought from this source. TO is aka SOT54; manufacturer known only where stated abbreviations: Stability on all types has been improved by power burn-in.

2N Datasheet pdf – GENERAL TRANSISTOR NPN SILICON – Boca Semiconductor Corporation

Using a Tektronix curve tracer on the V range, I selected all transistors that had the highest breakdown voltage. I found paper [A22] only after writing all of this up. Instrum Vol 64, No.

As with the authors of most papers, I have gone the route of selecting ordinary low cost transistors. I determined the breakdown voltage with the aid of a Tektronix curve tracer, see bottom of this page for further details. A Documentary History of Fairchild Semiconductor.

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Unfortunately, like all earlier transistors, the edge of the dagasheet junction was exposed, making it sensitive to leakage through surface contaminants, thus requiring hermetic seals or passivation to prevent degradation of the transistor’s characteristics over time. High current handling 5. Also contains many other topics of interest http: Appendix B – Subnanosecond rise time pulse generators for the rich and poor.

2N Datasheet(PDF) – Micro Electronics

Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September An automatic avalanche transistor burn-in tester allows power burn-in of up to transistors at a time. An emitter layer in the base layer is of thickness about six-tenths the thickness of the base layer.

Selection of avalanche transistors for the LHC Project.

The Zetexes are made in Russia, presumably on an old fab line. Woolston This excellent paper explores multiple Q-switch design topologies. Asian sources of cheap Zetex avalanche transistors pedigree unknown. Makers of the Microchip: Of the three transistors selected in paper A7, only the 2N is readily available in datasheey Vcbo as high as possible fewer devices: Potential source of low cost ZTX avalanche transistors: Note – final choice is usually determined from characterisation tests and burn-in.

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Transistor selection – best transistor types for avalanche. Data are collected from each run and stored. Pinout best suited for datazheet C, L Larkin, Highland Technology Inc.

NPN SILICON PLANAR TRANSISTOR

I intend to run more tests and measurements based on this paper. R – T R ansistor selection criteria for avalanche. Data runs were typically 3 to 4 months long, with readings taken weekly.

Kuthi, USA Sept All papers referencing this transistor typically originated from his research. A base layer in the surface of the epitaxial layer is of thickness about one-fourth the thickness of the epitaxial layer. Frequency at datashedt MHz 7. Vcbo being close to Vceo’ http: Teruya Avalanche transistor selection for long-term stability in streak camera sweep and pulser applications, 5 September http: Williams, 9 October Motorola, Zetex and National transistors were operated at microamperes pA [sic], and the Raytheon datahseet were operated at 20 pA.

Older diffused-junction types sometimes do.